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Qhia ib lub carousel ntawm peb slides ib zaug.Siv cov nyees khawm dhau los thiab Tom ntej kom txav mus los ntawm peb qhov swb ib zaug, lossis siv cov khawm slider thaum kawg kom txav mus los ntawm peb qhov swb ib zaug.
Ntawm no peb ua kom pom qhov imbibition-induced, spontaneous thiab xaiv wetting zog ntawm gallium-raws li kua hlau alloys ntawm metalized nto nrog microscale topographical nta.Gallium-raws li kua hlau alloys yog cov ntaub ntawv zoo kawg nkaus uas muaj qhov nro loj heev.Yog li ntawd, nws yog ib qhov nyuaj rau tsim lawv mus rau hauv nyias films.Ua kom tiav ntub dej ntawm eutectic alloy ntawm gallium thiab indium tau ua tiav ntawm microstructured tooj liab nto nyob rau hauv lub xub ntiag ntawm HCl vapors, uas tshem tawm cov ntuj oxide los ntawm cov kua hlau alloy.Qhov kev ntub dej no tau piav qhia ntau raws li tus qauv Wenzel thiab cov txheej txheem osmosis, qhia tias qhov loj me me yog qhov tseem ceeb rau kev ua haujlwm zoo osmosis vim ntub dej ntawm cov kua hlau.Tsis tas li ntawd, peb pom tau hais tias kev ntub dej ntawm cov hlau ua kua tuaj yeem xaiv tau raws cov cheeb tsam microstructured ntawm cov hlau nto los tsim cov qauv.Cov txheej txheem yooj yim no sib npaug ntawm cov tsho loj thiab cov duab ua kua hlau hla thaj chaw loj yam tsis muaj kev quab yuam sab nraud lossis kev ua haujlwm nyuaj.Peb tau ua pov thawj tias cov kua hlau ua qauv substrates khaws cov hluav taws xob sib txuas txawm tias thaum ncab thiab tom qab rov ua dua ntawm kev ncab.
Gallium raws li cov kua hlau alloys (GaLM) tau nyiam ntau xim vim lawv cov khoom zoo nkauj xws li cov ntsiab lus melting tsawg, hluav taws xob siab, tsis muaj viscosity thiab ntws, tsis muaj tshuaj lom thiab siab deformability1,2.Ntshiab gallium muaj qhov melting point ntawm li 30 ° C, thiab thaum fused nyob rau hauv eutectic compositions nrog ib co hlau xws li nyob rau hauv thiab Sn, lub melting point yog qis dua chav tsev kub.Ob qhov tseem ceeb GaLMs yog gallium indium eutectic alloy (EGaIn, 75% Ga thiab 25% Hauv qhov hnyav, melting point: 15.5 ° C) thiab gallium indium tin eutectic alloy (GaInSn lossis galinstan, 68.5% Ga, 21.5% Hauv, thiab 10. % tin, melting point: ~ 11 ° C) 1.2.Vim yog lawv cov hluav taws xob conductivity nyob rau hauv cov kua theem, GaLMs tau nquag soj ntsuam raws li tensile los yog deformable hluav taws xob txoj kev rau ntau yam kev siv, xws li electronic3,4,5,6,7,8,9 strained los yog nkhaus sensors 10, 11, 12 , 13, 14 thiab coj 15, 16, 17. Kev tsim cov khoom siv li no los ntawm kev tso tawm, luam ntawv, thiab qauv ntawm GaLM yuav tsum muaj kev paub thiab kev tswj hwm ntawm cov khoom sib txuas ntawm GaLM thiab nws cov hauv paus substrate.Galms muaj cov npoo siab nro (624 MNM-1 rau orgA28,19 thiab 534 MNM-1 rau Galinstan20,21) uas tuaj yeem ua rau lawv nyuaj los tswj lossis tswj hwm.Qhov tsim ntawm cov tawv tawv tawv ntawm haiv neeg gallium oxide ntawm GaLM nto nyob rau hauv ambient tej yam kev mob muab lub plhaub uas stabilizes lub GaLM nyob rau hauv ib tug uas tsis yog-spherical duab.Cov cuab yeej no tso cai rau GaLM luam tawm, cog rau hauv microchannels, thiab ua qauv nrog kev ruaj ntseg ntawm lub ntsej muag ua tiav los ntawm oxides19,22,23,24,25,26,27.Lub plhaub tawv oxide tseem tso cai rau GaLM ua raws li feem ntau cov chaw du, tab sis tiv thaiv cov hlau tsis muaj viscosity los ntawm kev ntws dawb.Kev nthuav tawm ntawm GaLM ntawm ntau qhov chaw yuav tsum tau quab yuam kom tawg lub plhaub oxide28,29.
Oxide plhaub tuaj yeem raug tshem tawm nrog, piv txwv li, muaj zog acids lossis cov hauv paus.Thaum tsis muaj oxides, GaLM cov ntaub ntawv poob rau ntawm yuav luag txhua qhov chaw vim lawv qhov nro loj, tab sis muaj kev zam: GaLM ntub cov hlau substrates.Ga tsim cov ntawv cog lus hlau nrog lwm cov hlau los ntawm cov txheej txheem hu ua "reactive wetting" 30,31,32.Qhov no reactive wetting yog feem ntau tshuaj xyuas nyob rau hauv tsis muaj oxides saum npoo kom yooj yim sib cuag hlau-rau-hlau.Txawm li cas los xij, txawm tias muaj cov oxides nyob hauv GaLM, nws tau raug tshaj tawm tias cov hlau-rau-hlau hu ua thaum oxides tawg ntawm kev sib cuag nrog cov hlau du29.Reactive wetting tshwm sim nyob rau hauv qis kev sib cuag cov ces kaum thiab zoo wetting ntawm feem ntau hlau substrates33,34,35.
Txog niaj hnub no, ntau cov kev tshawb fawb tau ua tiav ntawm kev siv cov khoom zoo ntawm reactive wetting ntawm GaLM nrog hlau los ua tus qauv GaLM.Piv txwv li, GaLM tau siv rau cov qauv hlau lem los ntawm smearing, dov, txau, los yog duab ntxoov ntxoo masking34, 35, 36, 37, 38. Kev xaiv wetting ntawm GaLM ntawm cov hlau nyuaj tso cai rau GaLM tsim cov qauv ruaj khov thiab zoo.Txawm li cas los xij, qhov siab ntom ntom ntawm GaLM cuam tshuam qhov tsim ntawm cov yeeb yaj kiab nyias nyias txawm tias ntawm cov hlau substrates.Txhawm rau daws qhov teeb meem no, Lacour et al.qhia txog ib txoj hauv kev los tsim cov yeeb yaj kiab du, tiaj tus GaLM nyias hla thaj chaw loj los ntawm evaporating ntshiab gallium mus rau kub-coated microstructured substrates37,39.Txoj kev no yuav tsum muaj lub tshuab nqus tsev vacuum, uas yog qeeb heev.Tsis tas li ntawd, GaLM feem ntau tsis tso cai rau cov khoom siv zoo li no vim muaj peev xwm embrittlement40.Evaporation kuj tso cov khoom siv rau ntawm lub substrate, yog li yuav tsum muaj cov qauv tsim los tsim cov qauv.Peb tab tom nrhiav ib txoj hauv kev los tsim cov yeeb yaj kiab GaLM du thiab cov qauv los ntawm kev tsim cov qauv hlau zoo nkauj uas GaLM ntub dej tsis tu ncua thiab xaiv yam tsis muaj oxides ntuj.Ntawm no peb tshaj tawm cov kev xaiv xaiv wetting ntawm oxide-dawb EGaIn ( raug GaLM) siv tus cwj pwm wetting tshwj xeeb ntawm photolithographically structured hlau substrates.Peb tsim photolithographically txhais cov qauv saum npoo ntawm qib micro los kawm txog imbibition, yog li tswj cov ntub dej ntawm oxide-dawb kua hlau.Kev txhim kho wetting zog ntawm EGaIn ntawm microstructured hlau nto yog piav qhia los ntawm cov zauv tsom xam raws li tus qauv Wenzel thiab cov txheej txheem impregnation.Thaum kawg, peb ua kom pom qhov loj hauv cheeb tsam deposition thiab qauv ntawm EGaIn los ntawm tus kheej-absorption, spontaneous thiab xaiv wetting ntawm microstructured hlau deposition nto.Tensile electrodes thiab strain gauges suav nrog EGaIn cov qauv tau nthuav tawm raws li cov kev siv tau.
Absorption yog kev thauj mus los hauv capillary uas cov kua nkag mus rau qhov chaw ntxhib los mos 41, uas pab txhawb kev sib kis ntawm cov kua.Peb tshawb xyuas tus cwj pwm wetting ntawm EGaIn ntawm cov hlau microstructured nto tso rau hauv HCl vapor (Fig. 1).Tooj liab tau raug xaiv los ua cov hlau rau qhov chaw hauv qab. Ntawm qhov chaw tiaj tus tooj liab, EGaIn pom lub kaum sab xis qis ntawm <20° nyob rau hauv lub xub ntiag ntawm HCl vapor, vim yog reactive wetting31 (Ntxiv daim duab 1). Ntawm qhov chaw tiaj tus tooj liab, EGaIn pom lub kaum sab xis qis ntawm <20° nyob rau hauv lub xub ntiag ntawm HCl vapor, vim yog reactive wetting31 (Ntxiv daim duab 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20° в присутствии паров HCl из-звакт тельный рисунок 1). Ntawm qhov chaw tiaj tus tooj liab, EGaIn pom qhov qis qis <20 ° kev sib cuag lub kaum sab xis nyob rau hauv lub xub ntiag ntawm HCl vapor vim reactive wetting31 (Cov duab ntxiv 1).在平坦的铜表面上，由于反应润湿，EGaIn 在存在HCl 蒸气的情况下显示出 <20° 。在平坦的铜表面上，由于反应润湿，EGaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20° в присутствии паоров HCl рниваг- ополнитель рисунок 1). Ntawm qhov chaw tiaj tus tooj liab, EGaIn nthuav tawm qis <20 ° kev sib cuag lub kaum sab xis nyob rau hauv lub xub ntiag ntawm HCl vapor vim reactive wetting (Daim duab 1).Peb ntsuas cov ces kaum sib ze ntawm EGaIn ntawm cov tooj liab ntau thiab ntawm cov yeeb yaj kiab tooj liab tso rau ntawm polydimethylsiloxane (PDMS).
a Columnar (D (diameter) = l (n deb) = 25 µm, d (qhov nrug ntawm kab) = 50 µm, H (qhov siab) = 25 µm) thiab pyramidal (dav = 25 µm, qhov siab = 18 µm) microstructures ntawm Cu / PDMS substrates.b Lub sij hawm-dependent hloov nyob rau hauv lub kaum sab xis ntawm lub tiaj tus substrates (tsis muaj microstructures) thiab arrays ntawm pillars thiab pyramids uas muaj tooj liab-coated PDMS.c, d Lub Sijhawm kaw ntawm (c) sab saib thiab (d) saib sab saum toj ntawm EGaIn wetting rau saum npoo nrog cov ncej nyob rau hauv lub xub ntiag ntawm HCl vapor.
Txhawm rau soj ntsuam cov txiaj ntsig ntawm topography ntawm kev ntub dej, PDMS substrates nrog cov kab kem thiab cov qauv pyramidal tau npaj, uas cov tooj liab tau muab tso nrog titanium nplaum txheej (Fig. 1a).Nws tau pom tias lub microstructured nto ntawm PDMS substrate yog conformally coated nrog tooj liab (Ntxiv daim duab 2).Lub sij hawm-nyob ntawm kev sib cuag lub kaum sab xis ntawm EGaIn ntawm cov qauv thiab cov qauv tooj liab-sputtered PDMS (Cu/PDMS) tau qhia hauv daim duab.1b ib.Lub kaum sab xis ntawm EGaIn ntawm cov qauv tooj liab / PDMS poob rau 0 ° hauv ~ 1 min.Kev txhim kho wetting ntawm EGaIn microstructures tuaj yeem siv los ntawm Wenzel equation\({{{{\rm{cos}}}}}}\,{\theta}_{{rough}}=r\,{{ {{ \rm{cos}}}}}}\,{\theta}_{0}\), where \({\theta}_{{rough}}\) sawv cev rau lub kaum sab xis ntawm qhov ntxhib nto, \(r \) Nto Roughness (= thaj chaw tiag tiag / thaj chaw pom tseeb) thiab lub kaum sab xis ntawm lub dav hlau \({\theta}_{0}\).Cov txiaj ntsig ntawm kev txhim kho wetting ntawm EGaIn ntawm cov qauv tsim yog pom zoo nrog tus qauv Wenzel, txij li qhov r qhov tseem ceeb rau sab nraub qaum thiab cov duab pyramidal yog 1.78 thiab 1.73, feem.Qhov no kuj txhais tau hais tias ib qho EGaIn poob rau ntawm tus qauv nto yuav nkag mus rau hauv cov grooves ntawm lub hauv paus nyem.Nws yog ib qho tseem ceeb uas yuav tsum nco ntsoov tias cov yeeb yaj kiab tsis sib xws yog tsim nyob rau hauv cov ntaub ntawv no, sib piv rau cov ntaub ntawv nrog EGaIn ntawm qhov chaw tsis muaj teeb meem (Cov duab ntxiv 1).
Los ntawm fig.1c,d (Cov yeeb yaj kiab ntxiv 1) nws tuaj yeem pom tau tias tom qab 30 s, raws li qhov pom kev sib cuag lub kaum sab xis mus txog 0 °, EGaIn pib diffuse mus deb ntawm ntug ntawm qhov poob, uas yog tshwm sim los ntawm kev nqus (Cov Yeeb Yam Ntxiv 2 thiab Ntxiv Ntxiv. Daim duab 3).Cov kev tshawb fawb yav dhau los ntawm cov chaw tiaj tus tau cuam tshuam lub sijhawm teev ntawm reactive wetting nrog kev hloov ntawm inertial mus rau viscous wetting.Qhov loj ntawm qhov av yog ib qho tseem ceeb hauv kev txiav txim siab seb tus kheej priming tshwm sim.Los ntawm kev sib piv lub zog saum npoo ua ntej thiab tom qab imbibition los ntawm qhov ntsuas kub ntawm qhov pom, qhov tseem ceeb ntawm kev sib cuag lub kaum sab xis \({\theta}_{c}\) ntawm imbibition tau muab los ntawm (saib Kev Sib Tham Ntxiv kom paub meej).The result \({\theta}_{c}\) is defined as \({{(\rm{cos)))))\,{\theta}_{c}=(1-\ phi } _{S})/(r-{\phi }_{S})\) where \({\phi}_{s}\) sawv cev rau thaj tsam fractional nyob rau saum cov ncej thiab \(r\ ) sawv cev qhov roughness. Imbibition tuaj yeem tshwm sim thaum \({\theta }_{c}\) > \({\theta }_{0}\), piv txwv li, lub kaum sab xis ntawm qhov chaw tiaj tus. Imbibition tuaj yeem tshwm sim thaum \({\theta }_{c}\) > \({\theta }_{0}\), piv txwv li, lub kaum sab xis ntawm qhov chaw tiaj tus. Впитывание может происходить, когда \ ({\ theta _ {c} \) > \ ({\ theta } _ {0} \), т.yog.контактный угол на плоской поверхности. Absorption tuaj yeem tshwm sim thaum \({\theta }_{c}\) > \({\theta }_{0}\), piv txwv li lub kaum sab xis ntawm qhov chaw tiaj tus.当\({\theta }_{c}\) > \({\theta }_{0}\), 即平面上的接触角时，会发生吸吸.当\({\theta }_{c}\) > \({\theta }_{0}\), 即平面上的接触角时，会发生吸吸. Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Suction tshwm sim thaum \({\theta }_{c}\) > \({\theta }_{0}\), contact angle on the plane.Rau cov txheej txheem tom qab, \(r\) thiab \({\phi}_{s}\) raug suav ua \(1+\{(2\pi {RH})/{d}^{2} \ } \ ) thiab \(\pi {R}^{2}/{d}^{2}\), qhov twg \(R\) sawv cev rau kab vojvoog, \(H\) sawv cev rau kem qhov siab, thiab \ ( d\) yog qhov kev ncua deb ntawm qhov chaw ntawm ob tug ncej (Fig. 1a).Rau lub post-structured nto nyob rau hauv daim duab.1a, lub kaum sab xis \({\theta}_{c}\) yog 60 °, uas loj dua lub dav hlau \(\theta}_{0}\) (~25 ° ) hauv HCl vapor Oxide-free EGaIn ntawm Cu/PDMS.Yog li ntawd, EGaIn cov tee dej tuaj yeem yooj yim cuam tshuam cov txheej txheem tooj liab tso rau hauv daim duab 1a vim yog nqus tau.
Txhawm rau tshawb xyuas cov txiaj ntsig ntawm qhov loj me ntawm cov qauv ntawm cov ntaub ntub dej thiab nqus ntawm EGaIn, peb tau hloov qhov loj ntawm cov ncej tooj liab.Ntawm daim duab.2 qhia cov ces kaum sib cuag thiab nqus ntawm EGaIn ntawm cov substrates.Qhov kev ncua deb l ntawm kab yog sib npaug ntawm txoj kab uas hla ntawm kab D thiab thaj tsam ntawm 25 txog 200 μm.Qhov siab ntawm 25 µm yog tas mus li rau txhua kab.\({\theta}_{c}\) txo qis nrog nce kab loj (Table 1), uas txhais tau hais tias kev nqus tsawg dua ntawm cov substrates nrog cov kab loj dua.Rau txhua qhov ntau thiab tsawg tau sim, \({\theta}_{c}\) yog ntau dua \({\theta}_{0}\) thiab xav tau wicking.Txawm li cas los xij, kev nqus tsis tshua pom tshwm rau tom qab-patterned nto nrog l thiab D 200 µm (Fig. 2e).
Lub Sijhawm-nyob ntawm kev sib cuag ntawm EGaIn ntawm Cu / PDMS nto nrog txhua qhov sib txawv tom qab raug rau HCl vapor.b-e Sab saum toj thiab sab saib ntawm EGaIn wetting.b D = l = 25 µm, r = 1.78.hauv D = l = 50 μm, r = 1.39.dD = l = 100 µm, r = 1.20.eD = l = 200 µm, r = 1.10.Tag nrho cov ncej muaj qhov siab ntawm 25 µm.Cov duab no tau noj tsawg kawg 15 feeb tom qab raug HCl vapor.Cov tee dej ntawm EGaIn yog dej los ntawm cov tshuaj tiv thaiv ntawm gallium oxide thiab HCl vapor.Tag nrho cov nplai bar hauv (b - e) yog 2 hli.
Lwm qhov kev ntsuas rau kev txiav txim siab qhov tshwm sim ntawm cov kua nqus dej yog kho cov kua ntawm qhov chaw tom qab tus qauv tau thov.Kurbin et al.Nws tau raug tshaj tawm tias thaum (1) cov ntawv tshaj tawm siab txaus, cov tee dej yuav raug nqus los ntawm cov qauv nto;(2) qhov kev ncua deb ntawm cov kab yog me me;thiab (3) lub kaum sab xis ntawm cov kua nyob rau saum npoo yog txaus me me42.Tus lej \({\theta}_{0}\) ntawm cov kua ntawm lub dav hlau uas muaj tib lub substrate khoom yuav tsum tsawg tshaj li qhov tseem ceeb ntawm lub kaum sab xis rau pinning, \({\theta}_{c,{pin)) } \ ), for absorption without pinning between posts, where \({\theta}_{c,{pin}}={{{{{\rm{arctan}}}}}}(H/\big \{ ( \ sqrt {2}-1)l\big\})\) (saib kev sib tham ntxiv kom paub meej).Tus nqi ntawm \({\theta}_{c,{pin}}\) nyob ntawm tus pin loj (Table 1).Txiav txim siab qhov tsis muaj qhov ntsuas L = l / H los txiav txim seb qhov nqus tau tshwm sim.Rau kev nqus, L yuav tsum tsawg dua tus qauv pib, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\tan}} } { \theta}_{{0}}\large\}\).For EGaIn \(({\theta}_{0}={25}^{\circ})\) on a copper substrate \({L}_{c}\) is 5.2.Txij li L kem ntawm 200 μm yog 8, uas yog ntau dua tus nqi ntawm \({L}_{c}\), EGaIn absorption tsis tshwm sim.Txhawm rau sim ntxiv cov txiaj ntsig ntawm geometry, peb tau pom tus kheej-priming ntawm ntau yam H thiab l (Cov Lus Qhia Ntxiv 5 thiab Cov Lus Ntxiv 1).Cov txiaj ntsig pom zoo nrog peb cov kev suav.Yog li, L hloov mus ua ib qho kev kwv yees zoo ntawm kev nqus;kua hlau nres absorbing vim pinning thaum qhov kev ncua deb ntawm tus ncej yog loj heev piv rau qhov siab ntawm tus ncej.
Wettability tuaj yeem txiav txim siab raws li qhov muaj pes tsawg leeg ntawm substrate.Peb tau tshawb xyuas qhov cuam tshuam ntawm qhov sib xyaw ntawm qhov ntub dej thiab nqus ntawm EGaIn los ntawm kev sib koom ua ke ntawm Si thiab Cu ntawm cov ncej thiab dav hlau (Cov duab ntxiv 6).Lub EGaIn kev sib cuag lub kaum sab xis txo qis ntawm ~ 160 ° txog ~ 80 ° raws li Si / Cu binary nto nce ntawm 0 mus rau 75% ntawm cov ntsiab lus tooj liab.Rau 75% Cu / 25% Si nto, \({\theta}_{0}\) yog ~80°, uas sib raug rau \({L}_{c}\) sib npaug rau 0.43 raws li cov ntsiab lus saum toj no .Vim tias cov kab l = H = 25 μm nrog L sib npaug rau 1 ntau dua qhov pib \({L}_{c}\), 75% Cu / 25% Si nto tom qab qauv tsis nqus vim immobilization.Txij li thaum lub kaum sab xis ntawm EGaIn nce ntxiv nrog Si, siab dua H lossis qis dua l yuav tsum tau kov yeej pinning thiab impregnation.Yog li ntawd, txij li lub kaum sab xis ntawm kev sib cuag (piv txwv li \({\theta}_{0}\)) nyob ntawm cov tshuaj muaj pes tsawg leeg ntawm qhov chaw, nws tuaj yeem txiav txim siab seb qhov imbibition tshwm sim hauv microstructure.
EGaIn nqus ntawm cov qauv tooj liab / PDMS tuaj yeem ntub cov kua hlau ua cov qauv siv tau.Txhawm rau ntsuas qhov tsawg kawg ntawm kab kab ua rau imbibition, cov khoom ntub dej ntawm EGaIn tau pom ntawm Cu / PDMS nrog cov kab tom qab uas muaj cov kab sib txawv ntawm kab ntawm 1 txog 101 (Fig. 3).Kev ntub dej feem ntau tshwm sim hauv thaj tsam tom qab kev tsim qauv.Lub EGaIn wicking tau ntseeg tau pom thiab qhov ntev wicking nce nrog cov kab ntawm kab.Kev nqus yuav luag tsis tshwm sim thaum muaj cov ntawv tshaj tawm nrog ob lossis tsawg dua kab.Qhov no tej zaum yuav yog vim muaj zog capillary.Rau kev nqus tau tshwm sim hauv cov qauv columnar, lub capillary siab tshwm sim los ntawm curvature ntawm EGaIn lub taub hau yuav tsum tau kov yeej (Ntxiv daim duab 7).Piv txwv li ib lub vojvoog ntawm curvature ntawm 12.5 µm rau ib kab ib leeg EGaIn lub taub hau nrog ib tug columnar qauv, lub capillary siab yog ~ 0.98 atm (~ 740 Torr).Qhov siab Laplace siab no tuaj yeem tiv thaiv kev ntub dej los ntawm kev nqus ntawm EGaIn.Tsis tas li ntawd, tsawg kab ntawm kab tuaj yeem txo qhov nqus ntawm lub zog uas yog vim qhov kev ua ntawm capillary ntawm EGaIn thiab kab.
Ib tee ntawm EGaIn ntawm cov qauv Cu / PDMS nrog cov qauv ntawm qhov dav sib txawv (w) hauv huab cua (ua ntej raug HCl vapor).Kab ntawm racks pib los ntawm sab saum toj: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), thiab 11 (w = 525 µm).b Kev taw qhia ntub dej ntawm EGaIn ntawm (a) tom qab raug HCl vapor rau 10 min.c, d Wetting of EGaIn on Cu/PDMS with columnar structures (c) ob kab (w = 75 µm) and (d) one row (w = 25 µm).Cov duab no tau coj 10 feeb tom qab raug HCl vapor.Scale bars ntawm (a, b) thiab (c, d) yog 5 hli thiab 200 µm, feem.Cov xub hauv (c) qhia qhov curvature ntawm EGaIn taub hau vim yog nqus.
Kev nqus ntawm EGaIn hauv cov qauv tom qab Cu/PDMS tso cai rau EGaIn tsim los ntawm kev xaiv wetting (Daim duab 4).Thaum ib qho poob ntawm EGaIn tau muab tso rau ntawm qhov chaw ua qauv thiab raug HCl vapor, EGaIn poob ua ntej, tsim lub kaum sab xis me me raws li cov kua qaub tshem tawm cov nplai.Tom qab ntawd, nqus tau pib los ntawm ntug ntawm qhov poob.Qhov loj-qhov qauv tuaj yeem ua tiav los ntawm centimeter-scale EGaIn (Fig. 4a, c).Txij li thaum nqus tau tshwm sim tsuas yog nyob rau saum npoo av, EGaIn tsuas yog ntub cov qauv cheeb tsam thiab yuav luag tsis ntub dej thaum nws mus txog qhov chaw tiaj tus.Yog li ntawd, cov ciaj ciam ntse ntawm EGaIn cov qauv raug pom (Daim duab 4d, e).Ntawm daim duab.4b qhia tau hais tias EGaIn nkag mus rau thaj tsam tsis muaj teeb meem, tshwj xeeb tshaj yog nyob ib puag ncig ntawm qhov chaw uas EGaIn cov tee dej tau muab tso rau hauv keeb kwm.Qhov no yog vim qhov tsawg tshaj plaws txoj kab uas hla ntawm EGaIn cov tee dej siv nyob rau hauv txoj kev tshawb no tshaj qhov dav ntawm cov ntawv sau.Tee ntawm EGaIn tau muab tso rau ntawm qhov chaw qauv los ntawm kev txhaj tshuaj los ntawm 27-G koob thiab koob txhaj tshuaj, ua rau cov tee nrog qhov tsawg kawg nkaus ntawm 1 hli.Qhov teeb meem no tuaj yeem daws tau los ntawm kev siv cov EGaIn me me.Zuag qhia tag nrho, Daim duab 4 qhia tau hais tias kev ntub dej ntawm EGaIn tuaj yeem raug ntxias thiab coj mus rau qhov chaw microstructured.Piv nrog rau kev ua haujlwm yav dhau los, cov txheej txheem ntub dej no yog qhov nrawm thiab tsis muaj kev quab yuam sab nraud kom ua tiav qhov ntub dej (Table 2).
emblem ntawm lub tsev kawm ntawv, tsab ntawv b, c nyob rau hauv daim ntawv ntawm ib tug xob laim bolt.Lub cheeb tsam absorbing yog them nrog array ntawm txhua kab nrog D = l = 25 µm.d, cov duab loj ntawm cov tav hauv e (c).Scale bars ntawm (a–c) thiab (d, e) yog 5 hli thiab 500 µm, feem.Ntawm (c-e), cov tee me me ntawm qhov chaw tom qab adsorption tig mus rau hauv dej vim yog cov tshuaj tiv thaiv ntawm gallium oxide thiab HCl vapor.Tsis muaj kev cuam tshuam tseem ceeb ntawm kev tsim dej ntawm kev ntub dej tau pom.Dej tau yooj yim tshem tawm los ntawm kev ziab yooj yim.
Vim yog cov kua dej ntawm EGaIn, EGaIn coated Cu / PDMS (EGaIn / Cu / PDMS) tuaj yeem siv rau cov electrodes hloov tau yooj yim thiab stretchable.Daim duab 5a piv cov kev hloov pauv ntawm cov qub Cu/PDMS thiab EGaIn/Cu/PDMS nyob rau hauv txawv loads.Qhov tsis kam ntawm Cu / PDMS nce siab hauv qhov nro, thaum lub zog ntawm EGaIn / Cu / PDMS tseem tsis tshua muaj zog.Ntawm daim duab.5b thiab d qhia SEM cov duab thiab cov ntaub ntawv EMF ntawm raw Cu/PDMS thiab EGaIn/Cu/PDMS ua ntej thiab tom qab daim ntawv thov voltage.Rau qhov tsis zoo Cu / PDMS, deformation tuaj yeem ua rau cov kab nrib pleb hauv lub zog Cu zaj duab xis tso rau ntawm PDMS vim elasticity tsis sib haum.Hauv qhov sib piv, rau EGaIn / Cu / PDMS, EGaIn tseem zoo coats Cu / PDMS substrate thiab tswj hluav taws xob txuas ntxiv yam tsis muaj qhov tawg lossis deformation tseem ceeb txawm tias tom qab siv cov lim.Cov ntaub ntawv EDS tau lees paub tias gallium thiab indium los ntawm EGaIn tau muab faib sib npaug ntawm Cu / PDMS substrate.Nws yog noteworthy tias lub thickness ntawm EGaIn zaj duab xis yog tib yam thiab piv nrog rau qhov siab ntawm tus ncej. Qhov no kuj tau lees paub los ntawm kev txheeb xyuas thaj chaw ntxiv, qhov sib txawv ntawm qhov tuab ntawm EGaIn zaj duab xis thiab qhov siab ntawm tus ncej yog <10% (Cov duab ntxiv 8 thiab Table 3). Qhov no kuj tau lees paub los ntawm kev txheeb xyuas thaj chaw ntxiv, qhov sib txawv ntawm qhov tuab ntawm EGaIn zaj duab xis thiab qhov siab ntawm tus ncej yog <10% (Cov duab ntxiv 8 thiab Table 3). Это также подтверждается дальнейшим топографическим анализом, где относительная разница междуй толще относительная разница между тол щ толба составляет <10% (дополнительный рис. 8 и таблица 3). Qhov no kuj tau lees paub los ntawm kev txheeb xyuas thaj chaw ntxiv, qhov sib txawv ntawm EGaIn zaj duab xis thickness thiab kem qhov siab yog <10% (Cov duab ntxiv 8 thiab Table 3).进一步的形貌分析也证实了这一点，其中EGaIn 薄膜厚度与柱子高度之间的相对差御襂<10. <10% Это также было подтверждено дальнейшим топографическим анализом, где относительная разница мелижиу те й столба составляла <10% (дополнительный рис. 8 и таблица 3). Qhov no kuj tau lees paub los ntawm kev txheeb xyuas thaj chaw ntxiv, qhov sib txawv ntawm EGaIn zaj duab xis thickness thiab kem qhov siab yog <10% (Cov duab ntxiv 8 thiab Table 3).Qhov no imbibition-raws li wetting tso cai rau lub thickness ntawm EGaIn coatings kom tswj tau zoo thiab ruaj khov nyob rau hauv loj cheeb tsam, uas yog txwv tsis pub nyuaj vim nws cov dej xwm.Daim duab 5c thiab e piv cov conductivity thiab tsis kam mus deformation ntawm tus thawj Cu/PDMS thiab EGaIn/Cu/PDMS.Nyob rau hauv lub demo, lub LED tig rau thaum txuas nrog untouched Cu / PDMS los yog EGaIn / Cu / PDMS electrodes.Thaum tsis zoo Cu / PDMS yog ncab, LED yuav tawm.Txawm li cas los xij, EGaIn / Cu / PDMS electrodes tseem txuas nrog hluav taws xob txawm tias nyob rau hauv qhov hnyav, thiab lub teeb LED tsuas yog dimmed me ntsis vim qhov nce electrode tsis kam.
Ib qho kev hloov pauv hloov pauv nrog nce load ntawm Cu / PDMS thiab EGaIn / Cu / PDMS.b, d SEM dluab thiab lub zog dispersive X-ray spectroscopy (EDS) tsom xam ua ntej (sab saum toj) thiab tom qab (hauv qab) polydiplexes loaded nyob rau hauv (b) Cu/PDMS thiab (d) EGaIn/Cu/methylsiloxane.c, e LEDs txuas rau (c) Cu / PDMS thiab (e) EGaIn / Cu / PDMS ua ntej (sab saum toj) thiab tom qab (hauv qab) ncab (~ 30% kev ntxhov siab).Qhov ntsuas ntsuas hauv (b) thiab (d) yog 50 µm.
Ntawm daim duab.6a qhia qhov tsis kam ntawm EGaIn / Cu / PDMS raws li kev ua haujlwm ntawm strain los ntawm 0% mus rau 70%.Qhov nce thiab rov ua haujlwm ntawm kev ua haujlwm yog proportional rau deformation, uas yog nyob rau hauv kev pom zoo nrog Pouillet txoj cai rau incompressible cov ntaub ntawv (R / R0 = (1 + ε) 2), qhov twg R yog tsis kam, R0 yog thawj tsis kam, ε yog strain 43. Lwm cov kev tshawb fawb tau pom tias thaum stretched, cov khoom siv hauv cov kua nruab nrab tuaj yeem hloov kho lawv tus kheej thiab ua kom sib npaug sib npaug nrog kev sib koom ua ke zoo dua, yog li txo qhov nce hauv 43, 44. Hauv txoj haujlwm no, txawm li cas los xij, tus neeg xyuas pib yog> 99% kua hlau los ntawm ntim vim Cu films tsuas yog 100 nm tuab. Hauv txoj haujlwm no, txawm li cas los xij, tus neeg xyuas pib yog> 99% kua hlau los ntawm ntim vim Cu films tsuas yog 100 nm tuab. Однако в этой работе проводник состоит из >99% жидкого металла по объему, так как пленки Cu имеют т волщит 10 Txawm li cas los xij, hauv txoj haujlwm no, tus neeg xyuas pib muaj> 99% kua hlau los ntawm ntim, vim Cu films tsuas yog 100 nm tuab.然而，在这项工作中，由于Cu 薄膜只有100 nm厚，因此导体是>99% 的液老金属（挮体积）.然而，在这项工作中，由于Cu 薄膜只有100 nm厚，因此导体是> 99%Txawm li cas los xij, hauv txoj haujlwm no, txij li Cu zaj duab xis tsuas yog 100 nm tuab, tus neeg xyuas pib muaj ntau dua 99% kua hlau (los ntawm ntim).Yog li ntawd, peb tsis cia siab tias Cu yuav ua rau muaj txiaj ntsig zoo rau cov khoom siv hluav taws xob ntawm cov khoom siv hluav taws xob.
Ib qho kev hloov pauv hauv EGaIn / Cu / PDMS tsis kam tiv thaiv kab mob hauv thaj tsam li 0-70%.Qhov siab tshaj plaws kev nyuaj siab mus txog ua ntej tsis ua hauj lwm ntawm PDMS yog 70% (Ntxiv daim duab 9).Cov dots liab yog qhov tseem ceeb ntawm kev kwv yees los ntawm Puet txoj cai.b EGaIn/Cu/PDMS conductivity stability test thaum lub sij hawm rov stretch-stretch cycles.Ib qho 30% strain tau siv rau hauv kev sim cyclic.Qhov ntev ntawm lub hauv paus yog 0.5 cm.L yog qhov pib ntev ntawm EGaIn/Cu/PDMS ua ntej ncab.
Qhov ntsuas qhov ntsuas (GF) qhia qhov rhiab heev ntawm lub sensor thiab txhais tau tias yog qhov piv ntawm kev hloov pauv hauv kev tiv thaiv kev hloov pauv hauv strain45.GF nce los ntawm 1.7 ntawm 10% strain mus rau 2.6 ntawm 70% strain vim qhov hloov pauv ntawm cov hlau.Piv rau lwm cov ntsuas ntsuas, GF EGaIn / Cu / PDMS tus nqi yog nruab nrab.Raws li lub sensor, txawm hais tias nws cov GF yuav tsis siab tshwj xeeb, EGaIn / Cu / PDMS nthuav tawm cov kev hloov pauv hloov hauv cov lus teb rau lub teeb liab qis rau lub suab nrov piv load.Txhawm rau ntsuas qhov kev ua tau zoo ntawm EGaIn / Cu / PDMS, cov hluav taws xob tiv thaiv tau raug saib xyuas thaum rov ua dua-stretch cycles ntawm 30% strain.Raws li qhia hauv daim duab.6b, tom qab 4000 stretching cycles, tus nqi kuj tseem nyob rau hauv 10%, uas tej zaum yuav yog vim lub nruam tsim ntawm scale thaum rov stretching cycles46.Yog li, lub sij hawm ntev hluav taws xob ruaj khov ntawm EGaIn / Cu / PDMS raws li cov khoom siv hluav taws xob stretchable thiab kev ntseeg tau ntawm cov teeb liab raws li qhov ntsuas ntsuas tau lees paub.
Nyob rau hauv tsab xov xwm no, peb tham txog kev txhim kho wetting zog ntawm GaLM ntawm microstructured hlau nto tshwm sim los ntawm infiltration.Spontaneous ua tiav wetting ntawm EGaIn tau ua tiav ntawm columnar thiab pyramidal hlau nto nyob rau hauv lub xub ntiag ntawm HCl vapor.Qhov no tuaj yeem piav qhia tus lej raws li tus qauv Wenzel thiab cov txheej txheem wicking, uas qhia tau hais tias qhov loj ntawm cov khoom siv tom qab microstructure xav tau rau wicking-induced wetting.Raws li kev xav thiab xaiv ntub dej ntawm EGaIn, coj los ntawm microstructured hlau nto, ua rau nws muaj peev xwm siv cov coatings sib txawv ntawm cov cheeb tsam loj thiab tsim cov qauv ua kua.EGaIn-coated Cu / PDMS substrates khaws cov hluav taws xob sib txuas txawm tias thaum ncab thiab tom qab rov ua dua, raws li tau lees paub los ntawm SEM, EDS, thiab kev ntsuas hluav taws xob.Tsis tas li ntawd, qhov hluav taws xob tsis kam ntawm Cu / PDMS coated nrog EGaIn hloov pauv hloov pauv thiab ntseeg tau hauv kev faib ua feem rau cov kev siv hom, qhia tias nws muaj peev xwm siv tau raws li qhov ntsuas ntsuas.Cov txiaj ntsig tau zoo yog muab los ntawm cov dej ua kua hlau ntub dej los ntawm imbibition yog raws li hauv qab no: (1) GaLM txheej thiab qauv tuaj yeem ua tiav yam tsis muaj kev quab yuam sab nraud;(2) GaLM ntub dej ntawm tooj liab-coated microstructure nto yog thermodynamic.qhov tshwm sim GaLM zaj duab xis yog ruaj khov txawm nyob rau hauv deformation;(3) hloov qhov siab ntawm cov tooj liab-coated kem tuaj yeem tsim ib zaj duab xis GaLM nrog kev tswj cov tuab.Tsis tas li ntawd, txoj hauv kev no txo ​​cov nqi ntawm GaLM xav tau los tsim cov yeeb yaj kiab, raws li cov ncej nyob hauv ib feem ntawm zaj duab xis.Piv txwv li, thaum lub array ntawm ncej nrog ib txoj kab uas hla ntawm 200 μm (nrog ib tug deb ntawm tus ncej ntawm 25 μm) yog qhia, lub ntim ntawm GaLM yuav tsum tau rau cov zaj duab xis tsim (~ 9 μm3 / μm2) yog piv rau cov zaj duab xis ntim tsis muaj. ncej.(25 µm3 / µm2).Txawm li cas los xij, nyob rau hauv cov ntaub ntawv no, nws yuav tsum tau coj mus rau hauv tus account tias qhov theoretical resistance, kwv yees raws li Puet txoj cai, kuj nce cuaj zaug.Zuag qhia tag nrho, cov khoom ntub dej tshwj xeeb ntawm cov kua hlau sib tham hauv tsab xov xwm no muab txoj hauv kev zoo rau tso cov kua hlau rau ntau hom substrates rau stretchable electronics thiab lwm yam kev siv tshiab.
PDMS substrates tau npaj los ntawm kev sib xyaw Sylgard 184 matrix (Dow Corning, USA) thiab hardener hauv qhov piv ntawm 10: 1 thiab 15: 1 rau kev ntsuas tensile, ua raws li kev kho hauv qhov cub ntawm 60 ° C.Copper lossis silicon tau muab tso rau hauv silicon wafers (Silicon Wafer, Namkang High Technology Co., Ltd., Republic of Kauslim) thiab PDMS substrates nrog 10 nm tuab titanium nplaum txheej siv cov txheej txheem kev cai sputtering.Cov kab ke thiab cov qauv pyramidal tau tso rau ntawm PDMS substrate siv cov txheej txheem silicon wafer photolithographic.Qhov dav thiab qhov siab ntawm cov qauv pyramidal yog 25 thiab 18 µm, feem.Qhov siab ntawm tus qauv bar tau kho ntawm 25 µm, 10 µm, thiab 1 µm, thiab nws txoj kab uas hla thiab suab txawv ntawm 25 mus rau 200 µm.
Lub kaum sab xis ntawm EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Kauslim) tau ntsuas los ntawm kev ntsuas qhov poob qis (DSA100S, KRUSS, Lub teb chaws Yelemees). Lub kaum sab xis ntawm EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Kauslim) tau ntsuas los ntawm kev ntsuas qhov poob qis (DSA100S, KRUSS, Lub teb chaws Yelemees). Краевой угол EGaIn (галлий 75,5 % / индий 24,5 %,> 99,99 %, Sigma Aldrich, Республика Корея) измеряли с помольью 100S, KRUSS, Германия). Lub kaum sab xis ntawm EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Kauslim) tau ntsuas los ntawm kev siv lub ntsuas dej (DSA100S, KRUSS, Lub teb chaws Yelemees). EGaIn (75.5% / 铟 24.5%,> 99.99%, Sigma Aldrich, 大韩民国). EGaIn (gallium75.5% / indium24.5%,> 99.99%, Sigma Aldrich, 大韩民国) tau ntsuas los ntawm kev siv tus ntsuas kev sib cuag (DSA100S, KRUSS, Lub teb chaws Yelemees). Краевой угол EGaIn (галлий 75,5% / индий 24,5%, > 99,99%, Sigma Aldrich, Республика Корея) измеряли с помокамию анана , KRUSS, Германия). Lub kaum sab xis ntawm EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Kauslim) tau ntsuas los ntawm kev ntsuas lub ntsej muag lub ntsej muag (DSA100S, KRUSS, Lub Tebchaws Yelemees).Muab lub substrate tso rau hauv 5 cm × 5 cm × 5 cm iav chamber thiab tso ib tug 4-5 μl poob ntawm EGaIn mus rau lub substrate siv ib tug 0.5 hli txoj kab uas hla syringe.Txhawm rau tsim HCl vapor nruab nrab, 20 μL ntawm HCl tov (37 wt.%, Samchun Chemicals, Republic of Kauslim) tau muab tso rau ib sab ntawm lub substrate, uas yog evaporated txaus los sau lub chamber hauv 10 s.
Qhov saum npoo tau siv SEM (Tescan Vega 3, Tescan Kauslim, koom pheej ntawm Kauslim).EDS (Tescan Vega 3, Tescan Kauslim, koom pheej ntawm Kaus Lim Kauslim) tau siv los kawm txog cov txiaj ntsig zoo thiab kev faib tawm.Lub EGaIn/Cu/PDMS nto saum toj kawg nkaus tau txheeb xyuas los ntawm kev siv qhov ntsuas qhov muag (Profilm3D, Filmetrics, USA).
Txhawm rau tshawb xyuas qhov kev hloov pauv ntawm cov hluav taws xob conductivity thaum lub sij hawm ncab, cov qauv nrog thiab tsis muaj EGaIn tau clamped ntawm cov khoom siv stretching (Bending & Stretchable Machine System, SnM, Republic of Kauslim) thiab tau hluav taws xob txuas nrog Keithley 2400 qhov chaw ntsuas. Txhawm rau tshawb xyuas qhov kev hloov pauv ntawm cov hluav taws xob conductivity thaum lub sij hawm ncab, cov qauv nrog thiab tsis muaj EGaIn tau clamped ntawm cov khoom siv stretching (Bending & Stretchable Machine System, SnM, Republic of Kauslim) thiab tau hluav taws xob txuas nrog Keithley 2400 qhov chaw ntsuas. Для исследования изменения электропроводности во время циклов растяжения образцы с EGaIn и без нелруакла образцы стяжения (Bending & Stretchable Machine System, SnM, Республика Корея) thiab электрически подключали к измерителю источника Keithley 2400. Txhawm rau kawm txog kev hloov hluav taws xob conductivity thaum lub voj voog ncab, cov qauv nrog thiab tsis muaj EGaIn tau teeb tsa rau ntawm cov khoom siv ncab (Bending & Stretchable Machine System, SnM, Republic of Kauslim) thiab hluav taws xob txuas nrog Keithley 2400 qhov chaw ntsuas.Txhawm rau kawm txog kev hloov pauv ntawm hluav taws xob conductivity thaum lub voj voog ncab, cov qauv nrog thiab tsis muaj EGaIn tau nruab rau ntawm lub tshuab ncab (Bending and Stretching Machine Systems, SnM, Republic of Kauslim) thiab hluav taws xob txuas nrog Keithley 2400 SourceMeter.Ntsuas qhov kev hloov pauv hauv qhov tsis kam ntawm qhov ntau ntawm 0% mus rau 70% ntawm cov qauv strain.Rau qhov kev ntsuam xyuas kev ruaj ntseg, qhov kev hloov pauv hauv kev tiv thaiv tau ntsuas ntau dua 4000 30% strain cycles.
Yog xav paub ntxiv txog kev tsim qauv, saib Nature study abstract linked to this article.
Cov ntaub ntawv txhawb nqa cov txiaj ntsig ntawm txoj kev tshawb fawb no tau nthuav tawm hauv Cov Ntaub Ntawv Ntxiv thiab Cov Ntaub Ntawv Raw.Kab lus no muab cov ntaub ntawv qub.
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